P: ISSN No. 2394-0344 RNI No.  UPBIL/2016/67980 VOL.- IX , ISSUE- IV July  - 2024
E: ISSN No. 2455-0817 Remarking An Analisation

Modeling and Simulation Study on High-Efficiency Triple Junction Solar Cells: Optimizing Design Parameters for InGaP/GaAs/Ge
Paper Id :  19137   Submission Date :  2024-07-12   Acceptance Date :  2024-07-22   Publication Date :  2024-07-25
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DOI:10.5281/zenodo.13374186
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Alankar Singh
Research Scholar
Physics
Shri Lal Bahadur Shastri Degree College,
Gonda, ,U.P., India,
Jitendra Singh
Professor
Physics
Shri Lal Bahadur Shastri Degree College,
Gonda, U.P., India
Kishun Bir
Assistant Professor
Physics
Kisan P.G. College, Bahraich
U.P., India
Abstract

A significant advancement in photovoltaic technology, high-efficiency triple-junction solar power cells improve efficiency by utilizing three semiconductor materials to capture a broader range of sunlight. The most challenging aspect of working with these semiconductors, such   as indium   gallium   phosphide   (InGa P), gallium   arsenide (Ga As),   and germanium (Ge),    is finding the optimal balance between different design factors. This paper aims to develop  methods  to  increase  energy  conversion  efficiency  and  establish  the  foundation for improved and more durable solar energy solutions  by optimizing  the  performance of triple-junction  (3J) solar cells under  varying   temperatures.   The   results   demonstrated   that   these   variables   have   a significant impact on the performance of solar cells in terms of electrical output and overall efficiency. As the temperature increases from 300 K to 400 K,  the values  of  the  parameters vary according  to  Voc  (2.868  V), Jsc (20.45 mA/cm²), Vmax (2.801 V), Jmax (19.821 mA/cm²), Pmax (52.4567 mW/cm²), Fill Factor (89.4341%), and Efficiency (41.9653%) These   findings demonstrate a  noteworthy advancement in solar energy technologies that improve sustainability and efficiency by optimizing different parameters and investigating novel approaches. The study also contributes to the ongoing development of photovoltaic systems
Keywords Renewable Energy, Triple Junction, Solar Power, Semiconductors, Photovoltaic System.
Introduction

The sun  is a significant source of energy on Earth's surface. The earth receives approximately 1000W/m2 of solar energy daily. This amount of sunlight has the potential to generate around 8500 TW of energy globally. As global energy demands continue to rise, solar photovoltaics play a crucial role in meeting those demands [1]. In solar photovoltaics, performance is the most crucia l factor to consider, as weather and light intensity are not consistently stable when used on land. Researchers are focusing on developing affordable and more efficient solar power devices [2]. The advancement of science and technology has led to the development and utilization of solar cells, or photovoltaic devices, for electricity generation through the principle of electronic radiative conversion. Solar cells are important devices designed to harness solar energy, providing a source of clean, renewable energy that could be utilized repeatedly [3]. Solar power has become a crucial renewable energy source that could significantly impact the future of energy production. Solar cells that convert light energy into electricity are categorized into different generations based on their materials and assembly methods [4][5]. In real-world conditions, humidity and temperature could reduce the stability of solar cells by affecting photoelectric and material characteristics [6]. However, simple steps have successfully manufactured high-efficiency Ga InP/Ga As/InGa As solar cells. These steps include applying a thin metal film to a flexible substrate, etching the Ga As substrate, and temporarily connecting the two [7]. It’s essential to conduct more rapid ageing tests to ensure the reliability of the process and the stability of flexible solar power cell performance. Currently, thin-film solar cells are the most commonly researched option due to their superior performance and lower cost [8]. Over the past few years, there has been significant research interest in micro-thin-film solar panels because of their lightweight nature, which is crucial for applications in  space. Cadmium telluride (CdTe), amorphous silicon  (a -Si), copper indium diselenide (CIS), and gallium arsenide (Ga As) are some thin-film light-absorbing semiconductor solar cell designs [9-10]. Ga As is a light-absorbing semiconductor from the III/V compound semiconductor and is the most efficient semiconductor in the world. At the Sandia (3/99) test centre, thin-film m-Si solar cells showed an efficiency of 25.0% (±0.5% tolerance). At Atla Device in the USA/New York, thin-film Ga As solar cells showed an efficiency of 29.1% (±0.6 tolerance). Germanium heterojunction solar cells a re 7.9% efficient at their best.

Multi-junction solar cells (MJSCs) could produce approximately twice the power of a regular solar cell of the same size [11]. They are a superior choice due to their cost-effectiveness, higher power generation efficiency, and increased theoretical conversion efficiency compared to other photovoltaic technologies. Two types of MJSCs were evaluated: InGa P-Ga As dual-junction solar panels with InGa P tunnelling layers and InGa P-Ga As-Ge triple- junction solar panel cells with Ga As tunnelling layers [12]. Recent studies indicate that triple junction (3J) solar panels have achieved over 44% efficiency, with expectations of reaching 50% efficiency for 4 to 5 -junction solar panel cells. Semiconductors such as Ge, Ga InAs/Ga As, and Ga InP are widely utilized in triple-junction solar cells due to their efficient light absorption and suitable minority carrier lifetimes and mobilities [13]. In a triple-junction solar cell, the first layer (Ga InP) absorbs the short-range portion of the spectrum, the second layer (Ga InAs) captures near-infrared light,  and the third  layer (Ge)  absorbs the lower  energy  levels  of infrared radiation. InGa P/Ga As/Ge triple-junction solar cells could function more effectively in space by reducing the wide band gap of the middle cell [14]. In a triple-junction solar cell model using InGa P, Ga As, and Ge, the heterojunction of two different semiconductor components could only occur if their lattice constants were very close to each other [15].

The traditional methods typically include experimental fabrication and testing f or optimizing high-efficiency triple junction solar cells. This involves creating physical prototypes of solar cells with various material configurations and layer thicknesses, testing their electrical output, efficiency, and durability under different lighting conditions, and using techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) for material characterization [16-17]. Studying the modelling and simulation of high-efficiency triple junction solar cells is important for advancing solar energy technology [18]. This research focuses on optimizing design parameters for InGa P/Ga As/Ge to maximize efficiency. High-efficiency triple junction solar cells have the potential to significantly increase the conversion of sunlight into electricity, thus making solar power more viable and competitive with traditional energy sources [19].

The study faces limitations in simulation accuracy, material quality variations, and environmental factors. Simulations could not capture all real-world phenomena, leading to discrepancies between simulated and actual performance [20]. Variations in material quality (InGa P, Ga As, Ge) and unconsidered environmental factors (temperature, radiation, mechanical stress) could impact solar cell performance and durability affecting the accuracy of the simulation results.

Designing and optimizing triple-junction solar cells is highly complex. It involves multiple factors such as bandgap alignment, lattice matching, and layer thickness [21]. Accurately estimating material properties is challenging, and limitations in simulation software affect the reliability of models and require significant computational resources. Validation with experimental data is crucial but difficult. Material variability and interlayer defects could impact performance while managing heat dissipation is critical for efficiency [22]. Scalability and maintaining cost-efficiency in large-scale production are significant challenges for the economic viability of optimized designs.

This research focuses on optimizing design parameters for InGa P/ Ga As/Ge to maximize efficiency by using computational methods, this study aims to rapidly identify the best configurations, reducing the time and cost associated with traditional experimental approaches. High-efficiency triple junction solar cells have the potential to significantly increase the conversion of sunlight into electricity, making solar power more viable and competitive with traditional energy sources. This research not only enhances the scientific understanding of multi- junction solar cells but also supports the development of more effective and affordable renewable energy solutions, crucial for addressing global energy demands and mitigating the impacts of climate change. 
Objective of study

These are the research objectives for this research:

  1. Conduct a comprehensive literature review of Triple Junction (TJ) solar cell designs.
  2. Run simulations using the proper Silvaco Advanced Technology Laboratory for Analysis and Simulation (ATLAS) software tools to mimic real-world circumstances and see how the TJ solar cell performs with various parameters.
  3. To increase productivity and comprehension of the effects of altering the bottom cell, top cell, and medium cell material.

This research has the following research contributions:

  1. The research is performed to identify optimal design parameters for high-efficiency triple junction solar cells.
  2. The research explored the insight into the electrical and optical behaviours of Indium Gallium Phosphide (InGa P), Gallium Arsenide (Ga As), and Germanium (Ge) layers.
  3. The research contributes to the advancement of solar cell technology through computational modelling and simulation.
  4. The research explored the potential for improving the scalability and cost-effectiveness of solar energy solutions
The next parts of this work are structured in the following manner: The next section offers the relevant studies of various authors. Section III details the methodology for High-Efficiency Triple Junction Solar Cells: Optimizing Design Parameters for InGa P/Ga As/Ge. Section IV presents the simulation results, including performance analysis. Finally, Section V provides a conclusion of the outcomes of this study and outlines potential areas for further investigation
Review of Literature

In this section, previous studies on the modelling and simulation of InGa P/Ga As/Ge solar cells are reviewed, which highlighting several critical parameters.

Kharchich et al., (2024) [23] utilized   a dual-junction solar cell optimization technique made from Ga As and Ga Sb to determine the ideal parameters for the uppermost base layer, which was the most effective method for absorbing the full spectrum of solar radiation. In the standard AM1.5G spectrum, they were able to get a power conversion efficiency of 41.65%, an open circuit voltage of 1.78V, a short circuit current of 235.72 mA/cm^2, and a fill factor of 90.16%.

Eddin et al., (2023) [24] enhanced the performance of a homojunction Ga As solar panel using the Silicon Valley Corporation (SILVACO) model by incorporating a p-InGa P layer for the front surface field (FSF) and an n- AlGa InP layer for the back surface field (BSF). The finding showed that the basic cell achieved an efficiency of 7.82% to increase the efficiency by 21.09%, it was recommended to add a p-InGa P layer to the standard cell. Similarly, the basic cell utilizing the n-AlGa InP layer achieved an efficiency of 16.09%, while the best cell incorporating both FSF and BSF layers achieved an efficiency of 30.88%. The improved eff iciency of cells with p-InGa P and n-AlGa InP layers was attributed to higher photon absorption and photogeneration rates.

Zakarya et al (2023) [25] utilized Silvaco Technology Computer-Aided Design (TCAD) tools to enhance a 5- junction cell that was comprised of AlInP, AlGa InP, AlGa InAs, Ga InP, Ga As, and InGa As, as well as Ge, which was the most efficient photovoltaic technology currently available in multi-junction solar cells, which were composed of stacked III-V semiconductor junctions. Recent tests have demonstrated that these cells were more than 47% efficient. The efficiency was determined by simulating the spectral absorption and I -V characteristics for each semiconductor mix and identifying the best thickness set to achieve a 26% performance under one sun .

Xu et al., (2023) [26] utilized the electroluminescence (EL) technique to measure the minority carrier lifespan of each Inverted Metamorphic Multi-Junction (IMM3J) solar cell subcell before and after exposure to 2 MeV protons. Before the exposure, the Ga InP, Ga As, and InGa As subcells had minority carrier lifetimes of 6.99 × 10−9 s, 3.09 × 10−8 s, and 2.31 × 10−8 s, respectively. After the proton treatment, the minority carrier lifetimes in the Ga InP, Ga As, and InGa As subcells significantly decreased by 1.63 × 10−10 s, 1.56 × 10−1 1 s, and 1.65 × 10−10 s, respectively. These results indicate that the short-circuit power and open-circuit voltage for each subcell would decrease over time.

Aissat et al, (2021) [27] utilized triple junction technology composed of InGa P, InGa As, and Ge, which focused on simulating and enhancing the electrical and structural properties of highly efficient solar cells. The result showed that the open-circuit voltage reached 2.3 V and the short-circuit current reached 20 mA/cm2, with a fill factor of 81.73% and a conversion efficiency of 39.03, where. the overall performance increased by 18%.

Salem et al., (2021) [28] employed a Single Large Vertical Cavity Surface Emitting Laser Array Technology Computer-Aided Design (SLVACO TCAD) tool to carry out all the optimization steps and simulation data for improving the performance of the InGa P/Ga As dual-junction (DJ) solar cells and enhanced the performance of the Dual-Junction (DJ) solar cell using two different top window materials, AlGa As and AlGa InP. As a result, AlGa InP emerged as the superior material for the top window layer of the InGa P/Ga As DJ cell, providing a 4% increase in conversion efficiency under one sun of the typical AM1.5G solar spectrum at 300 K, compared to recent research.

Li et al., (2020) [29] investigated the effects of proton exposure on Ga InP/Ga As/Ge triple-junction solar panels with varying Ga As sub-cell emitter thicknesses. The results showed that proton exposure caused more dama ge to the external quantum efficiency of the Ga As sub-cell compared to the Ga InP sub-cell and the study observed that as the emitter thickness increased after proton irradiation, the external quantum efficiency of the Ga As sub -cell initially increased and then decreased.

Zhang et al., (2020) [30] developed a TiO2/Al2O3/MgF2 multilayer anti-reflective (AR) coating using an Electron Beam Evaporation (EBE) system with 1 MeV electron beam irradiation. to optimize the performance of a Ga InP/Ga As/Ge triple-junction solar panel. The TiO2/Al2O3/MgF2 multi-layer AR coating has the potential to improve the triple junction solar cell's resistance to radiation by enhancing permeability across a wide range of wavelengths, particularly in the 750–900 nm region, which was the primary degradation window for the triple junction solar panels.

Gahouch et al. (2020) [31] utilized duplicated junction solar cells to create a concentrated photovoltaic (CPV) system that could reduce costs and improve efficiency. The results indicate that duplicated junction designs could enhance the efficiency of III-V solar cells at high levels, exceeding 1000 suns (under the AM1.5D spectrum of the sun at 300 K), and a cost analysis shows that these designs could reduce costs at ultra -high concentrations (UHCs) by over 30%.
Methodology

This study employs a computational research design to optimize the design parameters of high -efficiency triple junction solar cells consisting of Indium Gallium Phosphide (InGa P), Gallium Arsenide (Ga As), and Germanium (Ge) layers.
Statistics Used in the Study

Material Properties

Conventional silicon solar cells would gradually be replaced by high-efficiency multi-junction solar cells on space solar generators because of the growing need for power, mass, and area. To achieve high efficiency by current matching among the produced current from each sub-cell, band gap energy should be rigorously joined. TJ solar cells are made up of sub-cells, namely Ga InP, Ga As, and Ge junctions, which are coupled in series in a manner that is comparable to the traditional one [32]. A window, a p-n junction, a Back Surface Field (BSF) layer, and a buffer layer are the components that make up the top Ga InP cells, the middle Ga As cells, and the bottom Ge cells, respectively. For the simulation, they used InGa P, Ga As, and Ge materials, and their properties are provided in Table 1. The TJ design in a PV is shown in [33–34].

Table 1: Material properties of these materials

Cathode

 

N-AlInGaP

Window

0.03 µm

 

 

Top Cell GaInP

N-GaInP

Emitter

0.03 µm

P-GaInP

Base

0.68 µm

P-GaInP

BSF

0.05 µm

P-Tunnel Junction

0.01 µm

Tunnelling junction

N-Tunnel Junction

0.01 µm

N-AlGaAs

Window

0.1 µm

 

 

Middle Cell GaAs

N-GaAs

Emitter

0.1 µm

P-GaAs

Base

2.5 µm

P-GaAs

BSF

0.03 µm

 

P-Tunnel Junction

0.01 µm

Tunnelling junction

N-Tunnel Junction

0.01 µm

N-InGaP

Window

0.01 µm

 

 

Bottom Cell Ge

N-Ge

Emitter

0.3 µm

P-Ge

Substance

0.15 µm

Anode

 

 

 

Table 2 shows the values of the material parameters.

An illustration of the equivalent circuit of a TJ solar cell could be seen in Figure 1, which could be found below:


Figure 1: Electric circuit representation of a TJ solar cell [35].

The corresponding electrical circuit provides the following equation (1) for the total current density.

          (1)
Result and Discussion

The results of the modelling and simulation study on InGa P/Ga As/Ge triple -junction solar cells indicate that optimising design parameters could significantly enhance performance. Researchers were able to make configurations that were more efficient than standard designs by changing the bandgap energies, doping concentrations, and layer thickness. This optimisation increases the theoretical maximum efficiency and offers valuable insights for practical manufacturing, highlighting the significance of customised design in progressing solar cell technology towards more efficient and commercially viable solutions.

Figure 3 shows that a triple-junction solar cell is composed of three layers of different materials: indium gallium phosphide (InGa P), gallium arsenide (Ga As), and germanium (Ge). Each layer functions as a p-n junction, a region of a semiconductor doped with both p-type and n-type impurities, creating an electric field that enables the conversion of sunlight into electricity. The distinct layers absorb different wavelengths of light, with the InGaP layer capturing the highest-energy photons, the Ga As layer absorbing middle-energy photons, and the Ge layer taking in the lowest-energy photons. This layered structure allows the triple-junction solar cell to convert more sunlight into electricity compared to a single-junction solar cell, significantly enhancing its overall efficiency.

Figure 3: InGa P_Ga As_GeTriple Junction solar cell.

Figure 4 shows the current density versus voltage (J-V) of a solar cell at the National Renewable Energy Laboratory. The x-axis labelled "Voltage (V)" and the y-axis labelled "Current Density (A/cm²)," display several solar cell configurations: “MA,” “Ref,” “Si HJ,” and “Tunnel HJ.” The “Ref” cell shows the lowest current density, while the “Tunnel HJ” cell demonstrates higher current density at lower voltages. The tunnel heterojunction design could enhance current density at lower voltages, which could be advantageous for solar cells operating in low-light conditions."

 Figure 4 :Solar 3J InGaP_GaAs_Ge tandem Model

Figure 5(a) shows the labelled "External Quantum Efficiency (%)" on the y-axis and "Wavelength (nm)" on the x-axis. It displays the performance of three materials: Indium Gallium Phosphide (InGa P), Gallium Arsenide (Ga As), and Germanium (Ge). Each material has a corresponding line on the graph, with InGa P being the highest, indicating it   has the highest external quantum efficiency, converting the most absorbed photons into electricity. Ga As is in the middle, while Ge is the lowest, showing it has the least conversion efficiency. The x -axis spans from 200 to 1800 nanometers, covering a substantial part of the solar spectrum, and the y -axis ranges from 0 to 100%, representing the efficiency of photon-to-electricity conversion for each material.

Figure   5(b) shows the graph plotting "External Quantum Efficiency (%)" on the y-axis against "Wavelength (nm)" on the x-axis. The graph depicts various solar cells, including AM 1.5, 3J solar cells, InGa P, Ga As, and Ge. AM

1.5 represents a standard solar spectrum, while the 3J solar cell likely denotes a triple-junction solar cell, known for the highest light absorption efficiency due to its multiple layers by wavelength (200 nm to 1800 nm). InGaP shows peak efficiency around 500 nm, indicating its proficiency with shorter wavelengths, whereas Ga As perform best around 800 nm, similar to AM 1.5. Ge exhibits lower overall efficiency, with a peak at 1100 nm, demonstrating its specialisation in longer wavelength conversion. These insights highlight how different materia ls and multi-junction designs impact solar cell efficiency across varying light wavelengths.

 

(a)


(a)

Figure 5(a): EQE vs wavelength(nm) without 3j solar cell and (b): EQE vs wavelength(nm) with 3j solar cell

Figure 6 shows the x-axis labelled "Energy (EF)," where EF denotes the Fermi energy, the energy level at which fermions have a 50% probability of occupation. The y-axis is labelled "probability," indicating the likelihood of fermions occupying an energy state. Multiple curves represent different temperatures (e.g., T1, T2, T3), with higher temperatures showing a broader spread in probability distribution around the Fermi energy. These curves have a unique S-shaped shape that shows how temperature changes the chances of fermions occupying different energy levels compared to the Fermi level.

 

Figure 6: Fermi distribution

Figure 7 shows plots of intrinsic carrier density against temperature (K), with Germanium (Ge), Gallium Arsenide (Ga As), and Indium Gallium Phosphide (InGa P) represented. All materials show a corresponding increase in electrical conductivity as temperature increases along the x-axis. Indium Gallium Phosphide (InGa P) consistently exhibits the highest conductivity across the temperature range, followed by Gallium Arsenide (Ga As), and then Germanium (Ge), which displays the lowest conductivity. The data indicates that conductivity increases at an accelerating rate with rising temperatures.



Figure 7: Intrinsic carrier density (electrons per cubic cm)

Figure 8 shows an I-V curve representation of the relationship between the electrical current (I) flowing through a solar cell and the voltage (V). The four numbers along the curve, 0.0025, 0.0075, 0.0125, and 0.025, likely represent different power outputs of the solar cell. The “P = 52.4567 mW/cm²,” indicates that the units for these numbers are milliwatts per square centimetre (mW/cm²). This is a power density unit, which is the amount of power produced per unit area. So, the numbers along the curve likely represent the solar cell's power density at different points on the I-V curve. As the voltage applied to the solar cell increases, so does the cell's current. The curve reaches a maximum point, which is known as the point of maximum power (Pm). After this point, the TJ solar cell shows that the current starts to decrease as the voltage continues to increase.



Figure 8: I-V plot

Figure 9 (a) shows the x-axis is labelled “Temperature (K)” and its values range from 300.00k to 400.00 Kelvin. The y-axis is labelled “J (mA/cm²)” and its values range from 19.25 to 21.00. The red line seems to show values that are consistently higher than the green line. There are markings along the x-axis at 300 K, 325 K, 350 K, and 375 K. The curve increases slightly as the temperature increases.

Figure 9 (b) displays the labels "Temperature (K)" on the x-axis and "Voltage (V)" on the y-axis. The increase is not linear. The voltage starts to level off at around 350 Kelvin and starts to decrease slightly between 375 Kelvin and 400 Kelvin. The figure displays "2.9V" and "2.8V" as the maximum voltages.

 

(a)


(b)

Figure 9(a)
Conclusion

The development of high-efficiency triple-junction solar cells using InGa P/Ga As/Ge materials represents a significant advancement in photovoltaic technology. These cells can capture a wider spectrum of sunlight, leading to improved efficiency. The study emphasizes the influence of various factors on solar cell performance, affecting their electrical output and overall efficiency. For example, as the temperature increases up to 300 K, parameters such as Voc (V), Jsc (mA/cm²), Vmax (V), Jmax (mA/cm²), Pmax (m W/cm²), Fill Factor (%), and Efficiency (%) exhibit substantial increases, indicating their sensitivity to thermal conditions. This research marks a major milestone in solar energy technology, offering the potential for enhanced efficiency and sustainability. By optimizing these factors, the study paves the way for ongoing innovation in photovoltaics to meet the growing global demand for energy through more efficient solar power solutions. This research significantly advances solar energy solutions by fostering ongoing innovation in photovoltaics. By optimizing design parameters, it enhances the efficiency and sustainability of solar cells, making solar energy a more viable and widespread op tion for renewable energy. This contributes to a more sustainable energy landscape.

The future scope of this research could further explore optimizing these parameters to minimize efficiency losses at higher temperatures and improve overall performance. This could involve developing new materials and structures to better manage thermal effects and enhance durability. Additionally, integrating these adva nced solar cells into practical applications and scalable production processes would be crucial for widespread adoption. Continued advancements in this field have the potential to significantly contribute to a more sustainable energy landscape, reducing reliance on fossil fuels and supporting global energy needs with renewable resources.
References
  1. Maka, Ali OM, Tarik Ghalut, and Elsaye Elsaye. "The pathway toward decarbonisation and net -zero emissions by 2050: The role of solar energy technology." Green Technologies and Sustainability (2024): 100107.
  2. Soomar, Arsalan Muhammad, Abdul Hakeem, Mustapha Messaoudi, Piotr Musznicki, Amjad Iqba l, and Stanislaw Czapp. "Solar photovoltaic energy optimization and  challenges." Frontiers in Energy Research 10 (2022): 879985.
  3. Lewis, Nathan S. "Research opportunities to advance solar energy utilization." Science 351, no. 6271 (2016): aad1920.
  4. Vidal, Rosario, Jaume-Adrià Alberola-Borràs, Severin N. Habisreutinger, Joaquín-Luis Gimeno-Molina, David T. Moore, Tracy H. Schloemer, Iván Mora -Seró, Joseph J. Berry, and Joseph M. Luther. "Assessing health and environmental impacts of solvents for producing perovskite solar cells." Nature Sustainability 4, no. 3 (2021): 277-285.
  5. Toscano, Francesco. "Deposition and characterization of thin films made with active layer from end life first generation solar cells." PhD diss., Politecnico di Torino, 2023.
  6. Abdelkareem, Mohammad Ali, Aasim Ahmed Abdelghafar, Montaser Mahmoud, Enas Taha Sayed, Mohamed S. Mahmoud, Abdul Hai Alami, Mostafa Mohamed Al Agha, and Abdul Ghani Olabi. "Optimized solar photovoltaic-powered green hydrogen: Current status, recent advancements, and barriers." Solar Energy (2023): 112072.
  7. Pakhanov, Nikolay A., and Maxim Z. Shvarts. "Designing   of Lightweight   and Ultrathin III‐V/Ge Solar Cells for Flexible Space and Terrestrial Photovoltaic Blankets." physica status solidi (a) (2024): 2300709.
  8. Kim, Tae Soo, Hyo Jin Kim, Jae-Hoon Han, Won Jun Choi, and Ki Jun Yu. "Flexible InGa P/Ga As tandem solar cells encapsulated with ultrathin thermally grown silicon dioxide as a permanent water barrier and an antireflection coating." ACS Applied Energy Materials 5, no. 1 (2021): 227-233.
  9. Ji, Chunxue, Wen Liu, Yidi Bao, Xiaoling Chen, Guiqiang Yang, Bo Wei, Fuhua Yang, and Xiaodong Wang. "Recent applications of antireflection coatings in solar cells." In Photonics, vol. 9, no. 12, p. 906. MDPI, 2022.
  10. D'Rozario, Julia Rae. Light Management in III-V Thin-Film Photovoltaics and Micro-LEDs. Rochester Institute of Technology, 2022.
  11. Abdulmouti, Hassan. "Innovative Approach of  Concentrated Solar  Sphere  to  Generate  Electrical Power." Energies 17, no. 8 (2024): 1956.
  12. Hunter, Robert FH, Christopher E. Valdivia, Laurier S. Baribeau, and Karin Hinzer. "Unlocking the potential for extreme solar concentration via subcell segmentation." In AIP Conference Proceedings, vol. 2550, no. 1. AIP Publishing, 2022.
  13. Moss, Benjamin, Oytun Babacan, Andreas Kafizas, and Anna Hankin. "A review of inorganic photoelectrode developments and reactor scale‐up challenges for solar hydrogen production." Advanced Energy Materials 11, no. 13 (2021): 2003286.
  14. Xu, Jing, Kunjie Yang, Qingguo Xu, Xiaofang Zhu, Xin Wang, and Ming Lu. "Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction Ga InP/Ga As/InGa As Solar Cells." Crystals 12, no. 5 (2022): 670.
  15. Song, Zhiqiang, Zilong Wang, Hua Zhang, Weidong Wu, Binlin Dou, Xiao Tian, Changqing Hu, and Qian Jin. "Influence of Cell Temperature on Theoretical Properties of InGa P/InGa As/Ge Triple -Junction Concentrated Solar Cells." Recent Patents on Mechanical Engineering 17, no. 3 (2024): 159-170.
  16. Fedorenko, Anastasiia. Advanced Photovoltaic Devices Enabled by Lattice-Mismatched   Epitaxy. Rochester Institute of Technology, 2021.
  17. Abid, Zeeshan, Faiza Wahad, Sughra Gulzar, Muhammad Faheem Ashiq, Muhammad Shahid Aslam, Munazza Shahid, Muhammad Altaf, and Raja Shahid Ashraf. "Solar Cell Efficiency Energy Materials." Fundamentals of Solar Cell Design (2021): 271-315.
  18. Yamaguchi, Masafumi, Frank Dimroth, John F. Geisz, and Nicholas J. Ekins-Daukes. "Multi-junction solar cells paving the way for super high efficiency." Journal of Applied Physics 129, no. 24 (2021).
  19. Parauha, Yatish R., B. Vengadaesvaran, Nirupama S. Dhoble, and Sanjay J. Dhoble. "Solar Cells with Recent Improvements and Energy-Saving Strategies for the Future World." In Emerging Energy Materials, pp. 186-209. CRC Press, 2024.
  20. Rojek, Izabela, Marek Macko, Dariusz Mikołajewski, Milan Sága, and Tadeusz Burczyński. "Modern methods in the field of machine modelling and simulation as a research and practical issue related to Industry 4.0." Bulletin of the Polish Academy of Sciences. Technical Sciences 69, no. 2 (2021).
  21. France, Ryan M., John F. Geisz, Tao Song, Waldo Olavarria, Michelle Young, Alan Kibbler, and Myles
  22. Steiner. "Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices." Joule 6, no. 5 (2022): 1121-1135.
  23. Hamed, Salah Beni, Mouna Ben Hamed, Lassaad Sbita, Mohit Bajaj, Vojtech Blazek, Lukas Prokop, Stanislav Misak, and Sherif SM Ghoneim. "Robust optimization and power management of a triple junction photovoltaic electric vehicle with battery storage." Sensors 22, no. 16 (2022): 6123.
  24. Kharchich,  Fatima  Zahra,  and  Abdellatif Khamlichi.  "Simulation and  performance optimization  of Ga As/Ga Sb tandem solar cell." In MATEC  Web of Conferences, vol. 371, p. 02003. EDP Sciences, 2022.
  25. Ala'eddin, A. Saif. "High-Efficiency homojunction Ga As solar cell using InGa P as FSF and AlGa InP as BSF." Results in Optics 12 (2023): 100454.
  26. Zakarya, Ziani, Mahdad Moustafa Yassine, Baghdadli Tewfik, Sekkal Mohammed Chakib, Bessenouci Mohammed Zakaria, and Ghellai Nassera. "Predictive Modeling and CIGS Integration for Multi-Junction Solar Cell Efficiency Enhancement." (2023).
  27. Xu, Jing, Gang Yan, and Ming Lu. "Evaluation of the Minority-Carrier Lifetime of IMM3J Solar Cells under Proton Irradiation Based on Electroluminescence." Crystals 13, no. 2 (2023): 297.
  28. Aissat, Abdelkader, Said Nacer, and Jean-Pierre Vilcot. "Effect of In0. 70Ga 0. 30As quantum dot insertion in the middle cell of InyGa 1-yP/InxGa 1-xAs/Ge triple-junction for solar cells." Superlattices and Microstructures 149 (2021): 106760.
  29. Salem, Marwa S., Omar M. Saif, Ahmed Shaker, Mohamed Abouelatta, Abdullah J. Alzahrani, Adwan Alanazi, M. K. Elsaid,  and Rabie A.  Ramadan. "Research Article  Performance Optimization  of the InGa P/Ga As Dual-Junction Solar Cell Using SILVACO TCAD." (2021).
  30. Li, Junwei, Jintao Wang, Chengying Shi, Zujun Wang, and YuanYuan Xue. "Research on the emitter thickness optimization of Ga InP/Ga As/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation." AIP Advances 10, no. 11 (2020).
  31. Zhang, W. N., J. L. Tu, A. Aierken, G. Y. Song, X. Z. Xu, P. Y. Yan, X. Y. Sun, K. Hu, L. Li, and P. Q. Xu.   "Effect   of  1   MeV   electron   irradiation   on   TiO2/Al2O3/MgF2   anti-reflective   coating  for Ga InP/InGa As/Ge triple junction solar cells." Optical Materials 109 (2020): 110278.
  32. El‐Gahouchi, Mohamed, Mohammad Reza Aziziyan, Richard Arès, Simon Fafard, and Abderraouf Boucherif. "Cost‐effective energy harvesting at ultra‐high concentration with duplicated concentrated photovoltaic solar cells." Energy Science & Engineering 8, no. 8 (2020): 2760-2770.
  33. Hadjdida, Abdelkader, Mohamed Bourahla, H. Bülent Ertan, and Mohamed Bekhti. "Analytical modelling, simulation and comparative study of multi-junction solar cells efficiency." International Journal of Renewable Energy Research 8, no. 4 (2018): 1824-1832.
  34. Chtita, Smail, Yassine Chaibi, Aziz Derouich, and Jamal Belkadid. "Modeling and simulation of a photovoltaic panel based on a triple junction cell for a nanosatellite." In 2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), pp. 1-6. IEEE, 2018.
  35. Hong, Hwen-Fen, Tsung-Shiew Huang, Wu-Yih Uen, and Yen-Yeh Chen. "Damp-heat induced performance degradation for InGa P/Ga As/Ge triple-junction solar cell." Journal of Nanomaterials 2014 (2014): 2-2.
  36. Hadj Dida, A., M. Bourahla, and M. Bekhti. "Comparative Analysis and Simulation of Highest Efficiency Multi-junction Solar Cells for Space Applications." In Renewable Energy for Smart and Sustainable Cities: Artificial Intelligence in Renewable Energetic Systems 2 , pp. 535-543. Springer International Publishing, 2019.
  37. K.  Nishioka,  T.  Sueto, M.  Uchina,  Y.  Ota, “Detailed  analysis of  temperature characteristics of an InGa P/InGa As/Ge triple-junction solar cellˮ Journal of Electronic Materials, Vol. 39, pp. 704 -708, 2010.
  38. Priyanka Singh*, N.M. Ravindra “Temperature dependence of solar cell performance - an analysis” Solar Energy Materials & Solar Cells 101 (2012) 36 –45. Journal homepage: www.elsevier.com/locate/solmat
  39. Segev, Gideon, Gur Mittelman, and Abraham Kribus. "Equivalent circuit models for triple -junction concentrator solar cells." Solar Energy Materials and Solar Cells 98 (2012): 57-65.
  40. Subash Gautam; Debendra Bahadur Raut; Prabesh Neupane; Dhan Prasad Ghale; Rabin  Dhakal “Maximum power point tracker with solar prioritizer in photovoltaic application” IEEE International Conference on Renewable Energy Research and Applications (ICRERA 2016 ), Birmingham UK, 20-23 Nov. 2016.
  41. Silvaco, Int. "ATLAS user's manual device simulation software." Santa Clara, CA (2010).
  42. Weiwei, K. "TCAD simulation and modeling of AlGa N/Ga N HFETs." GaN HFETs (2011).
  43. Kharchich, Fatima Zahra, and Abdellatif Khamlichi. "Simulation aided design of a highly efficient Ga Sb based single-junction solar cell." International Review of Applied Sciences and Engineering 14, no. 2 (2023): 201-211.
  44. TINEDERT, Imad Eddine. "Numerical simulation of the performance of solar cells formed by nanostructures based on II-VI semiconductors (Simulation numérique des performances des cellules solaires formées par des nanostructures à base des semi-conducteurs II-VI)." PhD diss., Faculté des Sciences et de la technologie, 2022.
  45. Shockley, W. T. R. W., and  W.  T.  Read  Jr.  "Statistics  of  the  recombinations  of  holes  and electrons." Physical 0Review 87, no. 5 (1952): 835.
  46. Sah, Chih-Tang, Robert N. Noyce, and William Shockley. "Carrier generation and recombination in pn junctions and pn junction characteristics." Proceedings of the IRE 45, no. 9 (1957): 1228-1243.
  47. Ray                      Kumar             Santosh,            Kumar            Rahul,             Chakrabarti            Tapas;          2015 http://www.arresearchpublication.com/images/shortpdf/263.pdf